IRS2110SPBF vs IR2109SPBF Perbandingan

Perbandingan bersamaan detil IRS2110SPBF dari Infineon dan IR2109SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2110SPBF IR2109SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type High and Low Side, Half-Bridge —
Number of Drivers 2 2 (high-side + low-side)
Konfigurasi Output Non-Inverting —
Peak Source/Sink Current 2.5 A / 2.5 A —
Offset Voltage (High-Side) Up to 500 V —
Logic Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (25 V abs max) —
Propagation Delay (typ.) 120 ns —
Rise Time (typ.) 25 ns —
Fall Time (typ.) 17 ns —
Undervoltage Lockout Yes (VCC and VBS) Yes (VCC)
Input Logic Compatibility TTL / CMOS with hysteresis 3.3 V / 5 V CMOS / TTL
Rentang Suhu Kerja -40 C to +125 C —
Paket 16-SOIC (SOIC-16 W) SOIC-8
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (Pb-free) Compliant
Level MSL 3 —
Driver Configuration — Half-Bridge
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
Waktu naik — 200 ns
Waktu Menurun — 50 ns
Quiescent VCC Current — 1 mA
Bootstrap Diode — Integrated
Suhu Hubung Kerja — -40 C to +150 C

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