ISA150233C03LMDSXTMA1 vs IRF7854TRPBF Perbandingan
Perbandingan bersamaan detil ISA150233C03LMDSXTMA1 dari Infineon dan IRF7854TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon
ISA150233C03LMDSXTMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | ISA150233C03LMDSXTMA1 | IRF7854TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Configuration | Dual N-channel + P-channel (1 N + 1 P) | — |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| N-channel Continuous Drain Current (Ta) | 7.6 A | — |
| N-channel Continuous Drain Current (Tc) | 10.2 A | — |
| P-channel Continuous Drain Current (Ta) | 6.6 A | — |
| P-channel Continuous Drain Current (Tc) | 8.8 A | — |
| Total Power Dissipation (Ta) | 1.4 W | — |
| Total Power Dissipation (Tc) | 2.5 W | — |
| Paket | PG-DSO-8-920 (SO-8 with thermal pad) | SO-8 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Marking Code | 1523C03L | — |
| Technology | OptiMOS 3 trench MOSFET | HEXFET (planar N-channel) |
| Channel Type | N-channel + P-channel enhancement mode | — |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | -55°C to +150°C (TJ) |
| Status RoHS | Compliant | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Qualification | — | JEDEC industrial, Normal level |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |