ISA150233C03LMDSXTMA1 vs IRF7854TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISA150233C03LMDSXTMA1 disebabkan oleh Infineon dan IRF7854TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISA150233C03LMDSXTMA1 IRF7854TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0.48
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Configuration Dual N-channel + P-channel (1 N + 1 P) —
Drain-Source Voltage (VDS) 30 V 80 V
N-channel Continuous Drain Current (Ta) 7.6 A —
N-channel Continuous Drain Current (Tc) 10.2 A —
P-channel Continuous Drain Current (Ta) 6.6 A —
P-channel Continuous Drain Current (Tc) 8.8 A —
Total Power Dissipation (Ta) 1.4 W —
Total Power Dissipation (Tc) 2.5 W —
Kemasan PG-DSO-8-920 (SO-8 with thermal pad) SO-8
Jenis Pemasangan Surface Mount Surface Mount
Marking Code 1523C03L —
Technology OptiMOS 3 trench MOSFET HEXFET (planar N-channel)
Channel Type N-channel + P-channel enhancement mode —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55°C to +150°C (TJ)
Status RoHS Compliant —
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25°C — 10 A
Power Dissipation (PD) at Ta=25°C — 2.5 W
On-Resistance RDS(on) max at VGS=10V — 13.4 mΩ
Gate-Source Threshold Voltage VGS(th) max — 4.9 V
Total Gate Charge Qg — 27 nC
Lead-Free / RoHS — Yes (PBF suffix, lead-free)
Qualification — JEDEC industrial, Normal level
Solder Process — Reflow and wave-solderable
Gate Drive Voltage (recommended) — 10 V

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