ISA150233C03LMDSXTMA1 vs IRF7854TRPBF 比較
詳細並排比較 ISA150233C03LMDSXTMA1 由 Infineon 與 IRF7854TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon
ISA150233C03LMDSXTMA1 ✓ 啟用中
規格比較
| 參數 | ISA150233C03LMDSXTMA1 | IRF7854TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $0.48 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Configuration | Dual N-channel + P-channel (1 N + 1 P) | — |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| N-channel Continuous Drain Current (Ta) | 7.6 A | — |
| N-channel Continuous Drain Current (Tc) | 10.2 A | — |
| P-channel Continuous Drain Current (Ta) | 6.6 A | — |
| P-channel Continuous Drain Current (Tc) | 8.8 A | — |
| Total Power Dissipation (Ta) | 1.4 W | — |
| Total Power Dissipation (Tc) | 2.5 W | — |
| 封裝 | PG-DSO-8-920 (SO-8 with thermal pad) | SO-8 |
| 安裝類型 | Surface Mount | Surface Mount |
| Marking Code | 1523C03L | — |
| Technology | OptiMOS 3 trench MOSFET | HEXFET (planar N-channel) |
| Channel Type | N-channel + P-channel enhancement mode | — |
| 工作溫度範圍 | -55 C to +150 C (junction) | -55°C to +150°C (TJ) |
| RoHS 狀態 | Compliant | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Qualification | — | JEDEC industrial, Normal level |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |