ISA150233C03LMDSXTMA1 vs IRF7854TRPBF Comparison

Detailed side-by-side comparison of ISA150233C03LMDSXTMA1 by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 βœ“ Active

Specification Comparison

Parameter ISA150233C03LMDSXTMA1 IRF7854TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.48
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 3 β€”
Configuration Dual N-channel + P-channel (1 N + 1 P) β€”
Drain-Source Voltage (VDS) 30 V 80 V
N-channel Continuous Drain Current (Ta) 7.6 A β€”
N-channel Continuous Drain Current (Tc) 10.2 A β€”
P-channel Continuous Drain Current (Ta) 6.6 A β€”
P-channel Continuous Drain Current (Tc) 8.8 A β€”
Total Power Dissipation (Ta) 1.4 W β€”
Total Power Dissipation (Tc) 2.5 W β€”
Package PG-DSO-8-920 (SO-8 with thermal pad) SO-8
Mounting Type Surface Mount Surface Mount
Marking Code 1523C03L β€”
Technology OptiMOS 3 trench MOSFET HEXFET (planar N-channel)
Channel Type N-channel + P-channel enhancement mode β€”
Operating Temperature Range -55 C to +150 C (junction) -55Β°C to +150Β°C (TJ)
RoHS Status Compliant β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at Ta=25Β°C β€” 10 A
Power Dissipation (PD) at Ta=25Β°C β€” 2.5 W
On-Resistance RDS(on) max at VGS=10V β€” 13.4 mΞ©
Gate-Source Threshold Voltage VGS(th) max β€” 4.9 V
Total Gate Charge Qg β€” 27 nC
Lead-Free / RoHS β€” Yes (PBF suffix, lead-free)
Qualification β€” JEDEC industrial, Normal level
Solder Process β€” Reflow and wave-solderable
Gate Drive Voltage (recommended) β€” 10 V

Datasheets & Resources

Browse All Products Create BOM Request Quote