ISC008N06LM6ATMA1 vs ISC015N06NM5ATMA1 Perbandingan

Perbandingan bersamaan detil ISC008N06LM6ATMA1 dari Infineon dan ISC015N06NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC008N06LM6ATMA1 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 OptiMOS 5
Polarity / Channel Type N-Channel Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 44 A —
Pulsed Drain Current (ID, pulse) at Tc 378 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 221 W —
Gate-Source Voltage (VGS) max +/-20 V —
RDS(on) max @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
Gate Threshold Voltage (VGS(th)) Logic Level (1.0 V to 2.4 V typical) —
Rentang Suhu Kerja -55 C to +175 C (Tj) -55 C to +175 C
Package Type PG-TDSON-8 (Surface Mount) —
Gaya Mounting Surface Mount, Tape & Reel —
Level MSL 1 (per JEDEC J-STD-020) —
RoHS / Lead-Free Status RoHS Compliant, Lead-Free —
Bebas Halogen Yes —
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
Paket — PG-TDSON-8 (PQFN 5x6) Drain-Down
Tipe Mounting — Surface Mount
Technology — Trench MOSFET (OptiMOS 5)
Status RoHS — Compliant
MSL (Moisture Sensitivity Level) — 1

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