ISC008N06LM6ATMA1 vs ISC015N06NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC008N06LM6ATMA1 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC008N06LM6ATMA1 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 OptiMOS 5
Polarity / Channel Type N-Channel Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 44 A —
Pulsed Drain Current (ID, pulse) at Tc 378 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 221 W —
Gate-Source Voltage (VGS) max +/-20 V —
RDS(on) max @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
Gate Threshold Voltage (VGS(th)) Logic Level (1.0 V to 2.4 V typical) —
Gambaran Suhu Operasi -55 C to +175 C (Tj) -55 C to +175 C
Package Type PG-TDSON-8 (Surface Mount) —
Gaya Pemasangan Surface Mount, Tape & Reel —
Aras MSL 1 (per JEDEC J-STD-020) —
RoHS / Lead-Free Status RoHS Compliant, Lead-Free —
Boson Bebas Yes —
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
Kemasan — PG-TDSON-8 (PQFN 5x6) Drain-Down
Jenis Pemasangan — Surface Mount
Technology — Trench MOSFET (OptiMOS 5)
Status RoHS — Compliant
MSL (Moisture Sensitivity Level) — 1

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