ISC009N06LM5ATMA1 vs ISC011N06LM5ATMA1 Perbandingan
Perbandingan bersamaan detil ISC009N06LM5ATMA1 dari Infineon dan ISC011N06LM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC009N06LM5ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | OptiMOS 5 60V N-channel trench MOSFET | OptiMOS 5 |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 41 A | 37 A |
| Continuous Drain Current (ID) at Tc | 348 A | 288 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS threshold typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm | — |
| Power Dissipation at Ta (PD) | 3 W | — |
| Power Dissipation at Tc (PD) | 214 W | — |
| Rentang Suhu Kerja | -55 C to +175 C | -55C to +175C |
| Paket | PG-TSON-8-3 (SuperSO8 5x6) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Part Number | — | ISC011N06LM5ATMA1 |
| Polarity / Channel Type | — | N-Channel |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 188 W |
| RDS(on) max at VGS=10V | — | 1.15 mOhm |
| Jumlah Pin | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |