ISC011N04NM7VATMA1 vs IAUC120N06S5N011ATMA1 Perbandingan

Perbandingan bersamaan detil ISC011N04NM7VATMA1 dari Infineon dan IAUC120N06S5N011ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC011N04NM7VATMA1 IAUC120N06S5N011ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS-5
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25°C 38 A —
Continuous Drain Current (ID) at TC 256 A —
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 136 W —
Gate Threshold Voltage (Vth) Up to 3.2 V —
Technology Trench MOSFET, silicon —
Paket PG-TDSON-8 (source-down) PG-TDSON-8-53 (SSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) —
Rentang Suhu Kerja -55 °C to +175 °C (TJ) -55°C to +175°C (Tj)
RoHS Compliance Compliant (per Infineon product page) Compliant
Level MSL MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Polarity / Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) — 120 A (Tc=25°C, Vgs=10V)
Pulsed Drain Current (Idm) — 310 A (Tj)
On-Resistance Rds(on) max — 1.1 mΩ at Vgs=10 V
Gate-Source Voltage (Vgs) max — ±20 V
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total value]
Power Dissipation (Pd) — 188 W (Tc=25°C)
Automotive Qualification — AEC-Q101 qualified

Spek dan Sumber

IAUC120N06S5N011ATMA1

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon