ISC011N04NM7VATMA1 vs IAUC120N06S5N011ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N04NM7VATMA1 disebabkan oleh Infineon dan IAUC120N06S5N011ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC011N04NM7VATMA1 IAUC120N06S5N011ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS-5
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25°C 38 A —
Continuous Drain Current (ID) at TC 256 A —
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 136 W —
Gate Threshold Voltage (Vth) Up to 3.2 V —
Technology Trench MOSFET, silicon —
Kemasan PG-TDSON-8 (source-down) PG-TDSON-8-53 (SSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55°C to +175°C (Tj)
RoHS Compliance Compliant (per Infineon product page) Compliant
Aras MSL MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Polarity / Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) — 120 A (Tc=25°C, Vgs=10V)
Pulsed Drain Current (Idm) — 310 A (Tj)
On-Resistance Rds(on) max — 1.1 mΩ at Vgs=10 V
Gate-Source Voltage (Vgs) max — ±20 V
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total value]
Power Dissipation (Pd) — 188 W (Tc=25°C)
Automotive Qualification — AEC-Q101 qualified

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