ISC011N04NM7VATMA1 vs IAUC120N06S5N017ATMA1 Perbandingan

Perbandingan bersamaan detil ISC011N04NM7VATMA1 dari Infineon dan IAUC120N06S5N017ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC011N04NM7VATMA1 IAUC120N06S5N017ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
FET Type N-Channel N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID) at TA=25°C 38 A —
Continuous Drain Current (ID) at TC 256 A —
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 136 W —
Gate Threshold Voltage (Vth) Up to 3.2 V —
Technology Trench MOSFET, silicon —
Paket PG-TDSON-8 (source-down) PG-TDSON-8-43 (TDSON-8 EP)
Tipe Mounting Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) —
Rentang Suhu Kerja -55 °C to +175 °C (TJ) -55°C to +175°C
RoHS Compliance Compliant (per Infineon product page) Green Product (RoHS compliant)
Level MSL MSL 1 (per JEDEC J-STD-020) MSL1 (260°C peak reflow)
Series — OptiMOS 5
Continuous Drain Current (ID, Tc=25°C) — 120 A
Pulsed Drain Current (IDM) — 757 A
RDS(on) at VGS=10V — 1.7 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3.4 V (typ)
Total Gate Charge (Qg) at VGS=10V — 95.9 nC
Input Capacitance (Ciss) — 6.952 nF
Reverse Transfer Capacitance (Crss) — 84 pF
Output Capacitance (Coss) — 1.507 nF
Power Dissipation (PD, Tc=25°C) — 167 W
AEC-Q101 Qualification — Yes (Automotive Grade)

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IAUC120N06S5N017ATMA1

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