ISC011N04NM7VATMA1 vs IAUC120N06S5N017ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC011N04NM7VATMA1 sa pamamagitan ng Infineon at IAUC120N06S5N017ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 ✓ NakahandaInfineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC011N04NM7VATMA1 | IAUC120N06S5N017ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | — |
| Packhaging | PG-TDSON-8 (source-down) | PG-TDSON-8-43 (TDSON-8 EP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | -55°C to +175°C |
| RoHS Compliance | Compliant (per Infineon product page) | Green Product (RoHS compliant) |
| Level ng MSL | MSL 1 (per JEDEC J-STD-020) | MSL1 (260°C peak reflow) |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A |
| Pulsed Drain Current (IDM) | — | 757 A |
| RDS(on) at VGS=10V | — | 1.7 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | — | 95.9 nC |
| Input Capacitance (Ciss) | — | 6.952 nF |
| Reverse Transfer Capacitance (Crss) | — | 84 pF |
| Output Capacitance (Coss) | — | 1.507 nF |
| Power Dissipation (PD, Tc=25°C) | — | 167 W |
| AEC-Q101 Qualification | — | Yes (Automotive Grade) |