ISC011N04NM7VATMA1 vs IAUC120N06S5N017ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N04NM7VATMA1 disebabkan oleh Infineon dan IAUC120N06S5N017ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC011N04NM7VATMA1 IAUC120N06S5N017ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
FET Type N-Channel N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID) at TA=25°C 38 A —
Continuous Drain Current (ID) at TC 256 A —
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 136 W —
Gate Threshold Voltage (Vth) Up to 3.2 V —
Technology Trench MOSFET, silicon —
Kemasan PG-TDSON-8 (source-down) PG-TDSON-8-43 (TDSON-8 EP)
Jenis Pemasangan Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55°C to +175°C
RoHS Compliance Compliant (per Infineon product page) Green Product (RoHS compliant)
Aras MSL MSL 1 (per JEDEC J-STD-020) MSL1 (260°C peak reflow)
Series — OptiMOS 5
Continuous Drain Current (ID, Tc=25°C) — 120 A
Pulsed Drain Current (IDM) — 757 A
RDS(on) at VGS=10V — 1.7 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3.4 V (typ)
Total Gate Charge (Qg) at VGS=10V — 95.9 nC
Input Capacitance (Ciss) — 6.952 nF
Reverse Transfer Capacitance (Crss) — 84 pF
Output Capacitance (Coss) — 1.507 nF
Power Dissipation (PD, Tc=25°C) — 167 W
AEC-Q101 Qualification — Yes (Automotive Grade)

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