ISC011N06LM5ATMA1 vs IPT067N20NM6ATMA1 Perbandingan

Perbandingan bersamaan detil ISC011N06LM5ATMA1 dari Infineon dan IPT067N20NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC011N06LM5ATMA1 IPT067N20NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC011N06LM5ATMA1 —
Technology OptiMOS 5 Trench-gate OptiMOS 6 silicon
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 200 V
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
Paket PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-HSOF-8-1 (8-pin + exposed tab)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Rentang Suhu Kerja -55C to +175C -55C to +150C (junction)
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL moisture sensitivity level]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Product Family — OptiMOS 6
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25C — 15.3 A
Continuous Drain Current (ID) at TC=25C — 137 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 300 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free — Yes
Configuration — Single N-channel

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon