ISC011N06LM5ATMA1 vs IPT067N20NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N06LM5ATMA1 disebabkan oleh Infineon dan IPT067N20NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC011N06LM5ATMA1 IPT067N20NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC011N06LM5ATMA1 —
Technology OptiMOS 5 Trench-gate OptiMOS 6 silicon
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 200 V
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
Kemasan PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-HSOF-8-1 (8-pin + exposed tab)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Gambaran Suhu Operasi -55C to +175C -55C to +150C (junction)
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL moisture sensitivity level]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Product Family — OptiMOS 6
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25C — 15.3 A
Continuous Drain Current (ID) at TC=25C — 137 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 300 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free — Yes
Configuration — Single N-channel

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