ISC011N06LM5ATMA1 vs IPT067N20NM6ATMA1 比較
詳細並排比較 ISC011N06LM5ATMA1 由 Infineon 與 IPT067N20NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC011N06LM5ATMA1 | IPT067N20NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | Trench-gate OptiMOS 6 silicon |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 200 V |
| Continuous Drain Current (ID) at Ta | 37 A | — |
| Continuous Drain Current (ID) at Tc | 288 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| 封裝 | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-HSOF-8-1 (8-pin + exposed tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| 工作溫度範圍 | -55C to +175C | -55C to +150C (junction) |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL moisture sensitivity level] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Product Family | — | OptiMOS 6 |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25C | — | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | — | 137 A |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) typ | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: total gate charge] |
| Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free | — | Yes |
| Configuration | — | Single N-channel |