ISC015N04NM5ATMA1 vs ISC080N10NM6ATMA1 Perbandingan

Perbandingan bersamaan detil ISC015N04NM5ATMA1 dari Infineon dan ISC080N10NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC015N04NM5ATMA1 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) 3.3 V at 36 µA
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A —
Continuous Drain Current (ID) at Tc=25C 206 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Rentang Suhu Kerja -55 C to +175 C (junction, per OptiMOS 5) -55°C to +175°C (TJ max, per datasheet)
Paket / Case PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Status RoHS Compliant Compliant
Level MSL 1 (per Infineon SuperSO8 family) 1 (per JEDEC J-STD-020, per datasheet)
Drive Level Normal Level (VGS(th) ~3.4 V) —
Product Family — OptiMOS™ 6 100V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Continuous Drain Current (ID) at Tc — 75 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Paket — PG-TDSON-8 FL (TDSON EP)
Lead-Free — Yes
Bebas Halogen — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

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