ISC015N04NM5ATMA1 vs ISC080N10NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N04NM5ATMA1 disebabkan oleh Infineon dan ISC080N10NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC015N04NM5ATMA1 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) 3.3 V at 36 µA
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A —
Continuous Drain Current (ID) at Tc=25C 206 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Gambaran Suhu Operasi -55 C to +175 C (junction, per OptiMOS 5) -55°C to +175°C (TJ max, per datasheet)
Kemasan / Case PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Status RoHS Compliant Compliant
Aras MSL 1 (per Infineon SuperSO8 family) 1 (per JEDEC J-STD-020, per datasheet)
Drive Level Normal Level (VGS(th) ~3.4 V) —
Product Family — OptiMOS™ 6 100V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Continuous Drain Current (ID) at Tc — 75 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Kemasan — PG-TDSON-8 FL (TDSON EP)
Lead-Free — Yes
Boson Bebas — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

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