ISC017N04NM5ATMA1 vs ISC011N04NM7VATMA1 Perbandingan
Perbandingan bersamaan detil ISC017N04NM5ATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC017N04NM5ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=25C | 193 A | — |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 1.7 mOhm | — |
| Gate Threshold Voltage VGS(th) typ. | 3.4 V | — |
| Gate Charge Qg at VGS=10V | 67 nC | — |
| Input Capacitance Ciss at VDS=20V | 4800 pF | — |
| Power Dissipation at TA=25C | 3 W | — |
| Power Dissipation at TC=25C | 115 W | — |
| Suhu Hubung Kerja | -55C to +175C | — |
| Paket | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 (source-down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Level MSL | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Technology | — | Trench MOSFET, silicon |
| Short-Circuit Withstand | — | Yes (current-limited) |
| Rentang Suhu Kerja | — | -55 °C to +175 °C (TJ) |
| RoHS Compliance | — | Compliant (per Infineon product page) |