ISC028N03LF2SATMA1 vs ISC015N06NM5LF2ATMA1 Perbandingan

Perbandingan bersamaan detil ISC028N03LF2SATMA1 dari Infineon dan ISC015N06NM5LF2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC028N03LF2SATMA1 ISC015N06NM5LF2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 30V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 128 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm 1.55 mΩ
Gate Threshold Voltage VGS(th) typ 2.35 V —
Power Dissipation at TA 3 W —
Power Dissipation at TC 83 W —
Suhu Hubung Kerja -55 C to +175 C -55 °C to +175 °C
Paket PG-TDSON-8-62 (5x6 mm) with exposed pad PG-TDSON-8 FL (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
RoHS / Lead-Free Yes (RoHS compliant) —
Level MSL 1 (per JEDEC J-STD-020) —
Technology — OptiMOS 5 Linear FET 2 (N-Channel)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta — 32 A
Pulsed Drain Current (IDM) at Tc — 275 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 217 W
On-Resistance RDS(on) at VGS=10V (typ) — 1.3 mΩ
Gate Threshold Voltage (VGS(th)) — 3 V
Gate-Source Voltage Rating — ±20 V
Reverse Recovery Charge (Qrr) — 1.3 nC
Input Capacitance (Ciss) — 6.9 nF
Output Capacitance (Coss) — 1.3 nF
Reverse Transfer Capacitance (Crss) — 55 pF
Total Gate Charge (Qg) — 90 nC
RoHS — Compliant

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon