ISC028N03LF2SATMA1 vs ISC015N06NM5LF2ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC028N03LF2SATMA1 disebabkan oleh Infineon dan ISC015N06NM5LF2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC028N03LF2SATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | 1.55 mΩ |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | -55 °C to +175 °C |
| Kemasan | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8 FL (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Technology | — | OptiMOS 5 Linear FET 2 (N-Channel) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Pulsed Drain Current (IDM) at Tc | — | 275 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 217 W |
| On-Resistance RDS(on) at VGS=10V (typ) | — | 1.3 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3 V |
| Gate-Source Voltage Rating | — | ±20 V |
| Reverse Recovery Charge (Qrr) | — | 1.3 nC |
| Input Capacitance (Ciss) | — | 6.9 nF |
| Output Capacitance (Coss) | — | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | — | 55 pF |
| Total Gate Charge (Qg) | — | 90 nC |
| RoHS | — | Compliant |