ISC028N03LF2SATMA1 vs ISC024N08NM7ATMA1 Perbandingan

Perbandingan bersamaan detil ISC028N03LF2SATMA1 dari Infineon dan ISC024N08NM7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC028N03LF2SATMA1 ISC024N08NM7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 30V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 128 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.35 V —
Power Dissipation at TA 3 W —
Power Dissipation at TC 83 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TDSON-8-62 (5x6 mm) with exposed pad —
Tipe Mounting Surface Mount Surface Mount
RoHS / Lead-Free Yes (RoHS compliant) —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Series — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 80 V
Continuous Drain Current (Id) at Ta=25C — 24 A
Continuous Drain Current (Id) at Tc — 167 A
Power Dissipation (Pd) at Ta=25C — 3 W
Power Dissipation (Pd) at Tc — 150 W
Paket / Case — PG-TDSON-8 (SSO8)
Rentang Suhu Kerja — -55 C to +175 C
Gate Threshold Voltage (typ) — [DATA_NEEDED: gate threshold voltage]
Rds(on) at Vgs=10V (typ) — [DATA_NEEDED: Rds(on) typical value]
Total Gate Charge Qg (typ) — [DATA_NEEDED: total gate charge]
Status RoHS — Compliant
Bebas Halogen — Yes
Technology — OptiMOS 7 trench MOSFET

Spek dan Sumber

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