ISC028N03LF2SATMA1 vs ISC024N08NM7ATMA1 Comparison
Detailed side-by-side comparison of ISC028N03LF2SATMA1 by Infineon and ISC024N08NM7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveInfineon
ISC024N08NM7ATMA1
ISC024N08NM7ATMA1 - 80V OptiMOS 7 N-Channel MOSFET | Infineon
ISC024N08NM7ATMA1 β ActiveSpecification Comparison
| Parameter | ISC028N03LF2SATMA1 | ISC024N08NM7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 30V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 24 A | β |
| Continuous Drain Current (ID) at TC=25C | 128 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | β |
| Power Dissipation at TA | 3 W | β |
| Power Dissipation at TC | 83 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8-62 (5x6 mm) with exposed pad | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Series | β | OptiMOS 7 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 80 V |
| Continuous Drain Current (Id) at Ta=25C | β | 24 A |
| Continuous Drain Current (Id) at Tc | β | 167 A |
| Power Dissipation (Pd) at Ta=25C | β | 3 W |
| Power Dissipation (Pd) at Tc | β | 150 W |
| Package / Case | β | PG-TDSON-8 (SSO8) |
| Operating Temperature Range | β | -55 C to +175 C |
| Gate Threshold Voltage (typ) | β | [DATA_NEEDED: gate threshold voltage] |
| Rds(on) at Vgs=10V (typ) | β | [DATA_NEEDED: Rds(on) typical value] |
| Total Gate Charge Qg (typ) | β | [DATA_NEEDED: total gate charge] |
| RoHS Status | β | Compliant |
| Halogen-Free | β | Yes |
| Technology | β | OptiMOS 7 trench MOSFET |