ISC028N03LF2SATMA1 vs ISC024N08NM7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC028N03LF2SATMA1 disebabkan oleh Infineon dan ISC024N08NM7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC028N03LF2SATMA1 ISC024N08NM7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 30V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 128 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.35 V —
Power Dissipation at TA 3 W —
Power Dissipation at TC 83 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-62 (5x6 mm) with exposed pad —
Jenis Pemasangan Surface Mount Surface Mount
RoHS / Lead-Free Yes (RoHS compliant) —
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Series — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 80 V
Continuous Drain Current (Id) at Ta=25C — 24 A
Continuous Drain Current (Id) at Tc — 167 A
Power Dissipation (Pd) at Ta=25C — 3 W
Power Dissipation (Pd) at Tc — 150 W
Kemasan / Case — PG-TDSON-8 (SSO8)
Gambaran Suhu Operasi — -55 C to +175 C
Gate Threshold Voltage (typ) — [DATA_NEEDED: gate threshold voltage]
Rds(on) at Vgs=10V (typ) — [DATA_NEEDED: Rds(on) typical value]
Total Gate Charge Qg (typ) — [DATA_NEEDED: total gate charge]
Status RoHS — Compliant
Boson Bebas — Yes
Technology — OptiMOS 7 trench MOSFET

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