ISC056N08NM6ATMA1 vs IQDH35N03LM5SCATMA1 Perbandingan
Perbandingan bersamaan detil ISC056N08NM6ATMA1 dari Infineon dan IQDH35N03LM5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC056N08NM6ATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC056N08NM6ATMA1 | — |
| Series | OptiMOS 6 | — |
| Technology | N-Channel Trench MOSFET (OptiMOS 6) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TA=25°C | 15.3 A | — |
| Continuous Drain Current (ID) at TC=25°C | 88 A | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 100 W | — |
| Paket | PG-TDSON-8 FL (TDSON-8 Flat Lead) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Rentang Suhu Kerja | -55°C to +175°C | -55 C to +175 C |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Marking | — | IQDH35N03LM5S |