ISC056N08NM6ATMA1 vs IQDH35N03LM5SCATMA1 Comparison

Detailed side-by-side comparison of ISC056N08NM6ATMA1 by Infineon and IQDH35N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC056N08NM6ATMA1

ISC056N08NM6ATMA1 - 80V N-Ch OptiMOS 6 MOSFET | Infineon

ISC056N08NM6ATMA1 βœ“ Active
Infineon
IQDH35N03LM5SCATMA1

IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon

IQDH35N03LM5SCATMA1 βœ“ Active

Specification Comparison

Parameter ISC056N08NM6ATMA1 IQDH35N03LM5SCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $2.05
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC056N08NM6ATMA1 β€”
Series OptiMOS 6 β€”
Technology N-Channel Trench MOSFET (OptiMOS 6) OptiMOS 5 (trench, shielded-gate)
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at TA=25Β°C 15.3 A β€”
Continuous Drain Current (ID) at TC=25Β°C 88 A β€”
Power Dissipation (PD) at TA=25Β°C 3 W β€”
Power Dissipation (PD) at TC=25Β°C 100 W β€”
Package PG-TDSON-8 FL (TDSON-8 Flat Lead) PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin)
Mounting Type Surface Mount Surface Mount
Polarity N-Channel β€”
Operating Temperature Range -55Β°C to +175Β°C -55 C to +175 C
MSL Level 1 (per JEDEC J-STD-020) 1 (unlimited)
RoHS Status Compliant Compliant
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) max β€” 30 V
Gate-Source Voltage (VGS) max β€” Β±20 V
Continuous Drain Current (ID) at Ta β€” 66 A
Pulsed Drain Current (IDM) at Tc β€” 700 A
On-State Resistance (RDS(on)) max β€” 0.35 mOhm @ VGS=10V
Power Dissipation (PD) at Ta β€” 2.5 W
Power Dissipation (PD) at Tc β€” 278 W
Marking β€” IQDH35N03LM5S

Datasheets & Resources

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