ISC058N04NM5ATMA1 vs IPT067N20NM6ATMA1 Perbandingan

Perbandingan bersamaan detil ISC058N04NM5ATMA1 dari Infineon dan IPT067N20NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC058N04NM5ATMA1 IPT067N20NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V Normal Level OptiMOS 6
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V 200 V
Continuous Drain Current (ID, Tc=25C) 63 A —
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Paket PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-HSOF-8-1 (8-pin + exposed tab)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET Trench-gate OptiMOS 6 silicon
Rentang Suhu Kerja -55C to +175C -55C to +150C (junction)
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Continuous Drain Current (ID) at TA=25C — 15.3 A
Continuous Drain Current (ID) at TC=25C — 137 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 300 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Status RoHS — Compliant
Lead-Free — Yes
Level MSL — [DATA_NEEDED: MSL moisture sensitivity level]
Configuration — Single N-channel

Spek dan Sumber

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