ISC058N04NM5ATMA1 vs IPT067N20NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC058N04NM5ATMA1 disebabkan oleh Infineon dan IPT067N20NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC058N04NM5ATMA1 IPT067N20NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V Normal Level OptiMOS 6
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V 200 V
Continuous Drain Current (ID, Tc=25C) 63 A —
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Kemasan PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-HSOF-8-1 (8-pin + exposed tab)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET Trench-gate OptiMOS 6 silicon
Gambaran Suhu Operasi -55C to +175C -55C to +150C (junction)
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Continuous Drain Current (ID) at TA=25C — 15.3 A
Continuous Drain Current (ID) at TC=25C — 137 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 300 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Status RoHS — Compliant
Lead-Free — Yes
Aras MSL — [DATA_NEEDED: MSL moisture sensitivity level]
Configuration — Single N-channel

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