ISC058N04NM5ATMA1 vs IPT067N20NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC058N04NM5ATMA1 sa pamamagitan ng Infineon at IPT067N20NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ NakahandaInfineon
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
IPT067N20NM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC058N04NM5ATMA1 | IPT067N20NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V Normal Level | OptiMOS 6 |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 200 V |
| Continuous Drain Current (ID, Tc=25C) | 63 A | — |
| Continuous Drain Current (ID, Ta=25C) | 17 A | — |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 42 W | — |
| Packhaging | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-HSOF-8-1 (8-pin + exposed tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | Trench-gate OptiMOS 6 silicon |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55C to +150C (junction) |
| RoHS Compliance | RoHS Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | — |
| Gate Drive Level | Normal Level (10V VGS recommended) | — |
| Continuous Drain Current (ID) at TA=25C | — | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | — | 137 A |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) typ | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: total gate charge] |
| Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical value] |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Level ng MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |
| Configuration | — | Single N-channel |