ISC060N10NM6ATMA1 vs ISC011N06LM5ATMA1 Perbandingan
Perbandingan bersamaan detil ISC060N10NM6ATMA1 dari Infineon dan ISC011N06LM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC060N10NM6ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 100 V | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at Ta | 15 A | 37 A |
| Continuous Drain Current (ID) at Tc | 97 A | 288 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 125 W | 188 W |
| Rentang Suhu Kerja | -55 °C to +175 °C (TJ) | -55C to +175C |
| Paket | PG-TDSON-8 FL (5.15 x 6.15 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | OptiMOS 5 |
| Polarity | N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Part Number | — | ISC011N06LM5ATMA1 |
| Polarity / Channel Type | — | N-Channel |
| RDS(on) max at VGS=10V | — | 1.15 mOhm |
| Jumlah Pin | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |