ISC060N10NM6ATMA1 vs ISC011N06LM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC060N10NM6ATMA1 sa pamamagitan ng Infineon at ISC011N06LM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ NakahandaInfineon
ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
ISC011N06LM5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC060N10NM6ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 100 V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at Ta | 15 A | 37 A |
| Continuous Drain Current (ID) at Tc | 97 A | 288 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 125 W | 188 W |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | -55C to +175C |
| Packhaging | PG-TDSON-8 FL (5.15 x 6.15 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | OptiMOS 5 |
| Polarity | N-Channel | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Part Number | — | ISC011N06LM5ATMA1 |
| Polarity / Channel Type | — | N-Channel |
| RDS(on) max at VGS=10V | — | 1.15 mOhm |
| Bilang ng Pin | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |