ISC0802NLSATMA1 vs IAUC60N04S6N044ATMA1 Perbandingan

Perbandingan bersamaan detil ISC0802NLSATMA1 dari Infineon dan IAUC60N04S6N044ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC0802NLSATMA1 IAUC60N04S6N044ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Part Number ISC0802NLSATMA1 —
FET Type N-Channel —
Technology OptiMOS 5 (Power MOSFET) OptiMOS-6 N-channel trench MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 150 A —
Continuous Drain Current (ID) at Ta 22 A —
RDS(on) max at VGS=10V 3.6 mOhm —
Power Dissipation (Pd) at Ta 2.5 W —
Power Dissipation (Pd) at Tc 125 W —
Rentang Suhu Kerja -55 C to +175 C —
Paket PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8 (5x6 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Drain-Source Voltage (V_DS) — 40 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at Tc=25°C — 60 A
Continuous Drain Current (I_D) at Tc=100°C — [DATA_NEEDED: pulsed/current derated value]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max @ V_GS=10V — 4.4 mΩ
On-Resistance R_DS(on) max @ V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
Total Gate Charge (Q_g) — [DATA_NEEDED: typical gate charge]
Power Dissipation (P_D) at Tc=25°C — 42 W
Suhu Hubung Kerja — -55°C to +175°C
Level MSL — 1 (unlimited)
Automotive Qualification — AEC-Q101 qualified (IAUC prefix)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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