ISC0802NLSATMA1 vs IAUC60N04S6N044ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC0802NLSATMA1 disebabkan oleh Infineon dan IAUC60N04S6N044ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC0802NLSATMA1 IAUC60N04S6N044ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Part Number ISC0802NLSATMA1 —
FET Type N-Channel —
Technology OptiMOS 5 (Power MOSFET) OptiMOS-6 N-channel trench MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 150 A —
Continuous Drain Current (ID) at Ta 22 A —
RDS(on) max at VGS=10V 3.6 mOhm —
Power Dissipation (Pd) at Ta 2.5 W —
Power Dissipation (Pd) at Tc 125 W —
Gambaran Suhu Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8 (5x6 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Drain-Source Voltage (V_DS) — 40 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at Tc=25°C — 60 A
Continuous Drain Current (I_D) at Tc=100°C — [DATA_NEEDED: pulsed/current derated value]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max @ V_GS=10V — 4.4 mΩ
On-Resistance R_DS(on) max @ V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
Total Gate Charge (Q_g) — [DATA_NEEDED: typical gate charge]
Power Dissipation (P_D) at Tc=25°C — 42 W
Suhu Hubungan Operasi — -55°C to +175°C
Aras MSL — 1 (unlimited)
Automotive Qualification — AEC-Q101 qualified (IAUC prefix)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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