ISC080N10NM6ATMA1 vs IAUT300N08S5N012ATMA2 Perbandingan

Perbandingan bersamaan detil ISC080N10NM6ATMA1 dari Infineon dan IAUT300N08S5N012ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC080N10NM6ATMA1 IAUT300N08S5N012ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V OptiMOS™-5 80 V
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 1200 A (per datasheet, typical)
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA —
Paket PG-TDSON-8 FL (TDSON EP) PG-HSOF-8-1 (8-pin HSOF with drain tab)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +175°C (TJ max, per datasheet) -55 °C to +175 °C (TJ)
Level MSL 1 (per JEDEC J-STD-020, per datasheet) [DATA_NEEDED: MSL level]
Status RoHS Compliant —
Lead-Free Yes —
Bebas Halogen Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Tipe Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc=25°C) — 300 A
On-Resistance RDS(on) max @ VGS=10V — 1.2 mΩ
Maximum Power Dissipation (PD, Tc) — 375 W
Gate-to-Source Voltage (VGS) — ±20 V
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant

Spek dan Sumber

IAUT300N08S5N012ATMA2

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon