ISC080N10NM6ATMA1 vs IAUT300N08S5N012ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC080N10NM6ATMA1 disebabkan oleh Infineon dan IAUT300N08S5N012ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC080N10NM6ATMA1 IAUT300N08S5N012ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V OptiMOS™-5 80 V
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 1200 A (per datasheet, typical)
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA —
Kemasan PG-TDSON-8 FL (TDSON EP) PG-HSOF-8-1 (8-pin HSOF with drain tab)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (TJ max, per datasheet) -55 °C to +175 °C (TJ)
Aras MSL 1 (per JEDEC J-STD-020, per datasheet) [DATA_NEEDED: MSL level]
Status RoHS Compliant —
Lead-Free Yes —
Boson Bebas Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Jenis Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc=25°C) — 300 A
On-Resistance RDS(on) max @ VGS=10V — 1.2 mΩ
Maximum Power Dissipation (PD, Tc) — 375 W
Gate-to-Source Voltage (VGS) — ±20 V
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant

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