ISC088N08NM6ATMA1 vs IAUCN08S7L033ATMA1 Perbandingan

Perbandingan bersamaan detil ISC088N08NM6ATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC088N08NM6ATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (ID) at Ta=25 C 12.1 A —
Continuous Drain Current (ID) at Tc=25 C 59 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V (typical Infineon OptiMOS 7 limit)
Gate Threshold Voltage (VGS(th)) 3.5 V [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10 V 8.8 mOhm —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Ta=25 C 3 W —
Power Dissipation (PD) at Tc=25 C 71 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TDSON-8 FL PG-TDSON-8-34 (SSO8, 5x6 mm²)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020, typical for this package)
Status RoHS Compliant (per distributor listings) Compliant
Technology Trench-gate OptiMOS 6 OptiMOS 7 trench MOSFET
Series — Automotive OptiMOS 7
Tipe Transistor — N-Channel MOSFET
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Rentang Suhu Kerja — -55°C to +175°C (TJ)
Qualification — Automotive Grade (per Infineon datasheet header)

Spek dan Sumber

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