ISZ023N06LM6ATMA1 vs ISC011N04NM7VATMA1 Perbandingan
Perbandingan bersamaan detil ISZ023N06LM6ATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISZ023N06LM6ATMA1 - 60V 149A OptiMOS 6 N-Channel MOSFET | Infineon
ISZ023N06LM6ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISZ023N06LM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 60 V | — |
| Part Number | ISZ023N06LM6 | — |
| Orderable Part Number | ISZ023N06LM6ATMA1 | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at Ta | 24 A | — |
| Pulsed Drain Current (ID, Tc) | 149 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| Paket | PG-TSDSON-8-34 (Surface Mount) | PG-TDSON-8 (source-down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +175C | — |
| Level MSL | 1 | MSL 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Configuration | Single | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| Rentang Suhu Kerja | — | -55 °C to +175 °C (TJ) |
| RoHS Compliance | — | Compliant (per Infineon product page) |