ISZ023N06LM6ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of ISZ023N06LM6ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ023N06LM6ATMA1
ISZ023N06LM6ATMA1 - 60V 149A OptiMOS 6 N-Channel MOSFET | Infineon
ISZ023N06LM6ATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | ISZ023N06LM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 60 V | β |
| Part Number | ISZ023N06LM6 | β |
| Orderable Part Number | ISZ023N06LM6ATMA1 | β |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at Ta | 24 A | β |
| Pulsed Drain Current (ID, Tc) | 149 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 100 W | β |
| Package | PG-TSDSON-8-34 (Surface Mount) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +175C | β |
| MSL Level | 1 | MSL 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Configuration | Single | β |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| RoHS Compliance | β | Compliant (per Infineon product page) |