ISZ023N06LM6ATMA1 vs ISC011N04NM7VATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISZ023N06LM6ATMA1 sa pamamagitan ng Infineon at ISC011N04NM7VATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISZ023N06LM6ATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 60 V —
Part Number ISZ023N06LM6 —
Orderable Part Number ISZ023N06LM6ATMA1 —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) Trench MOSFET, silicon
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Ta 24 A —
Pulsed Drain Current (ID, Tc) 149 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Packhaging PG-TSDSON-8-34 (Surface Mount) PG-TDSON-8 (source-down)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +175C —
Level ng MSL 1 MSL 1 (per JEDEC J-STD-020)
Tindminan RoHS Compliant —
Lead-Free Yes —
Configuration Single —
Product Family — OptiMOS 7 Power-Transistor
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
Hanay ng Temperature na Operasyon — -55 °C to +175 °C (TJ)
RoHS Compliance — Compliant (per Infineon product page)

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