ISZ033N03LF2SATMA1 vs ISZ056N03LF2SATMA1 Perbandingan

Perbandingan bersamaan detil ISZ033N03LF2SATMA1 dari Infineon dan ISZ056N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISZ033N03LF2SATMA1 ISZ056N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A —
Continuous Drain Current (ID) at TC=25C 109 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TA=25C 3 W —
Power Dissipation (PD) at TC=25C 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] [DATA_NEEDED: gate-source voltage max]
Gate Threshold Voltage (VGS(th)) 2.35 V max @ 30 uA 2.35 V (typ)
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] [DATA_NEEDED: total gate charge]
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TSDSON-8 FL (8-pin) PG-TSDSON-8 (PQFN 3.3x3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — StrongIRFET 2
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 16 A
Continuous Drain Current (ID) at Tc — 72 A
On-Resistance (RDS(on)) max at VGS=10V — 5.6 mOhm
On-Resistance (RDS(on)) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 52 W
Rentang Suhu Kerja — -55 C to +175 C

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