ISZ033N03LF2SATMA1 vs ISZ056N03LF2SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ033N03LF2SATMA1 disebabkan oleh Infineon dan ISZ056N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISZ033N03LF2SATMA1 ISZ056N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A —
Continuous Drain Current (ID) at TC=25C 109 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TA=25C 3 W —
Power Dissipation (PD) at TC=25C 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] [DATA_NEEDED: gate-source voltage max]
Gate Threshold Voltage (VGS(th)) 2.35 V max @ 30 uA 2.35 V (typ)
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] [DATA_NEEDED: total gate charge]
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TSDSON-8 FL (8-pin) PG-TSDSON-8 (PQFN 3.3x3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — StrongIRFET 2
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 16 A
Continuous Drain Current (ID) at Tc — 72 A
On-Resistance (RDS(on)) max at VGS=10V — 5.6 mOhm
On-Resistance (RDS(on)) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 52 W
Gambaran Suhu Operasi — -55 C to +175 C

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga