ISZ056N03LF2SATMA1 vs ISC009N03LF2SATMA1 Perbandingan
Perbandingan bersamaan detil ISZ056N03LF2SATMA1 dari Infineon dan ISC009N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | ISZ056N03LF2SATMA1 | ISC009N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | StrongIRFET 2 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 16 A | 43 A |
| Continuous Drain Current (ID) at Tc | 72 A | 341 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | — |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 52 W | 188 W |
| Rentang Suhu Kerja | -55 C to +175 C | -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet]) |
| Paket | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-TDSON-8-62 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Technology | — | OptiMOS™ trench |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Gate Drive Voltage (VGS) | — | 10 V (typical for rated RDS(on)) |
| Level MSL | — | [DATA_NEEDED: MSL rating] |