JMTG070N06A vs BSZ0901NSIATMA1 Perbandingan

Perbandingan bersamaan detil JMTG070N06A dari Jiejie Micro dan BSZ0901NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum JMTG070N06A BSZ0901NSIATMA1
Merek Jiejie Micro Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Jiejie Micro (JJW) Infineon Technologies
Part Number JMTG070N06A BSZ0901NSIATMA1
Polarity / Type N-channel Enhancement Mode —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 70 A —
On-Resistance RDS(ON) < 6 mOhm @ VGS = 10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Technology Advanced Trench MOSFET OptiMOS trench N-channel MOSFET
Paket PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Tipe Mounting Surface Mount (SMD) Surface Mount
Single Pulse Avalanche Energy (EAS) IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) —
Lead Status Lead free / RoHS compliant —
Rentang Suhu Kerja [DATA_NEEDED: TJ max and operating range] -55 C to +150 C (typical MOSFET range)
Thermal Resistance RthJA [DATA_NEEDED: theta_JA] —
Configuration Single N-channel MOSFET —
Series — OptiMOS 25V
FET Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Jumlah Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)
Status RoHS — Compliant

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