JMTG070N06A vs BSZ0901NSIATMA1 比較
詳細並排比較 JMTG070N06A 由 Jiejie Micro 與 BSZ0901NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | JMTG070N06A | BSZ0901NSIATMA1 |
|---|---|---|
| 品牌 | Jiejie Micro | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Jiejie Micro (JJW) | Infineon Technologies |
| Part Number | JMTG070N06A | BSZ0901NSIATMA1 |
| Polarity / Type | N-channel Enhancement Mode | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 70 A | — |
| On-Resistance RDS(ON) | < 6 mOhm @ VGS = 10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Technology | Advanced Trench MOSFET | OptiMOS trench N-channel MOSFET |
| 封裝 | PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| 安裝類型 | Surface Mount (SMD) | Surface Mount |
| Single Pulse Avalanche Energy (EAS) | IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) | — |
| Lead Status | Lead free / RoHS compliant | — |
| 工作溫度範圍 | [DATA_NEEDED: TJ max and operating range] | -55 C to +150 C (typical MOSFET range) |
| Thermal Resistance RthJA | [DATA_NEEDED: theta_JA] | — |
| Configuration | Single N-channel MOSFET | — |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| 腳位數 | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |
| RoHS 狀態 | — | Compliant |