JMTG070N06A vs BSZ0901NSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng JMTG070N06A sa pamamagitan ng Jiejie Micro at BSZ0901NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | JMTG070N06A | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Jiejie Micro | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Jiejie Micro (JJW) | Infineon Technologies |
| Part Number | JMTG070N06A | BSZ0901NSIATMA1 |
| Polarity / Type | N-channel Enhancement Mode | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 70 A | — |
| On-Resistance RDS(ON) | < 6 mOhm @ VGS = 10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Technology | Advanced Trench MOSFET | OptiMOS trench N-channel MOSFET |
| Packhaging | PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Uri ng Pagpapasok | Surface Mount (SMD) | Surface Mount |
| Single Pulse Avalanche Energy (EAS) | IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) | — |
| Lead Status | Lead free / RoHS compliant | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: TJ max and operating range] | -55 C to +150 C (typical MOSFET range) |
| Thermal Resistance RthJA | [DATA_NEEDED: theta_JA] | — |
| Configuration | Single N-channel MOSFET | — |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Bilang ng Pin | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |
| Tindminan RoHS | — | Compliant |