JMTG100N06A vs BSC0901NSATMA1 Perbandingan

Perbandingan bersamaan detil JMTG100N06A dari Jiejie Micro dan BSC0901NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum JMTG100N06A BSC0901NSATMA1
Merek Jiejie Micro Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Jiangsu JieJie Microelectronics Co., Ltd Infineon Technologies
Tipe Transistor N-Channel Power Trench MOSFET —
Drain-Source Voltage V(DSS) 60 V —
Continuous Drain Current I(D) 55 A (at V(GS)=10 V, T(C)=25 °C) —
R(DS(on)) Typ @ V(GS)=10 V 7.7 mΩ —
R(DS(on)) Typ @ V(GS)=4.5 V 8.9 mΩ —
Gate Threshold Voltage V(GS(th)) Typ 1.5 V —
Paket PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Tipe Mounting Surface Mount Surface Mount
Plating Pb-free —
Bebas Halogen Yes —
RoHS Compliant —
UIS (Avalanche) Tested 100 % —
V(DS) Tested 100 % —
EAS Test Condition T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A —
Primary Applications Load Switch, PWM, DC-DC, Motor Drive —
Part Family — OptiMOS 30V
Technology — N-Channel Trench MOSFET (OptiMOS)
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Rentang Suhu Kerja — -55C to +150C
Tingkat Sensitivitas Kekeringan (MSL) — 1
Built-in Body Diode — Yes
Status RoHS — Compliant
Configuration — Single N-Channel with Built-in Diode

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