JMTG100N06A vs BSC0901NSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci JMTG100N06A disebabkan oleh Jiejie Micro dan BSC0901NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | JMTG100N06A | BSC0901NSATMA1 |
|---|---|---|
| Merek | Jiejie Micro | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Jiangsu JieJie Microelectronics Co., Ltd | Infineon Technologies |
| Jenis Transistor | N-Channel Power Trench MOSFET | — |
| Drain-Source Voltage V(DSS) | 60 V | — |
| Continuous Drain Current I(D) | 55 A (at V(GS)=10 V, T(C)=25 °C) | — |
| R(DS(on)) Typ @ V(GS)=10 V | 7.7 mΩ | — |
| R(DS(on)) Typ @ V(GS)=4.5 V | 8.9 mΩ | — |
| Gate Threshold Voltage V(GS(th)) Typ | 1.5 V | — |
| Kemasan | PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Plating | Pb-free | — |
| Boson Bebas | Yes | — |
| RoHS | Compliant | — |
| UIS (Avalanche) Tested | 100 % | — |
| V(DS) Tested | 100 % | — |
| EAS Test Condition | T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A | — |
| Primary Applications | Load Switch, PWM, DC-DC, Motor Drive | — |
| Part Family | — | OptiMOS 30V |
| Technology | — | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Gambaran Suhu Operasi | — | -55C to +150C |
| Tingkat sensitiviti Air Nama (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Status RoHS | — | Compliant |
| Configuration | — | Single N-Channel with Built-in Diode |