JMTG100N06A vs JMTG070N06A Perbandingan

Perbandingan bersamaan detil JMTG100N06A dari Jiejie Micro dan JMTG070N06A dari Jiejie Micro. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum JMTG100N06A JMTG070N06A
Merek Jiejie Micro Jiejie Micro
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Jiangsu JieJie Microelectronics Co., Ltd Jiejie Micro (JJW)
Tipe Transistor N-Channel Power Trench MOSFET —
Drain-Source Voltage V(DSS) 60 V —
Continuous Drain Current I(D) 55 A (at V(GS)=10 V, T(C)=25 °C) —
R(DS(on)) Typ @ V(GS)=10 V 7.7 mΩ —
R(DS(on)) Typ @ V(GS)=4.5 V 8.9 mΩ —
Gate Threshold Voltage V(GS(th)) Typ 1.5 V —
Paket PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) PDFN5x6-8L (Power DFN 5x6 mm, 8 leads)
Tipe Mounting Surface Mount Surface Mount (SMD)
Plating Pb-free —
Bebas Halogen Yes —
RoHS Compliant —
UIS (Avalanche) Tested 100 % —
V(DS) Tested 100 % —
EAS Test Condition T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A —
Primary Applications Load Switch, PWM, DC-DC, Motor Drive —
Part Number — JMTG070N06A
Polarity / Type — N-channel Enhancement Mode
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 70 A
On-Resistance RDS(ON) — < 6 mOhm @ VGS = 10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Technology — Advanced Trench MOSFET
Single Pulse Avalanche Energy (EAS) — IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC)
Lead Status — Lead free / RoHS compliant
Rentang Suhu Kerja — [DATA_NEEDED: TJ max and operating range]
Thermal Resistance RthJA — [DATA_NEEDED: theta_JA]
Configuration — Single N-channel MOSFET

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