JMTG100N06A vs JMTG070N06A Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci JMTG100N06A disebabkan oleh Jiejie Micro dan JMTG070N06A disebabkan oleh Jiejie Micro. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr JMTG100N06A JMTG070N06A
Merek Jiejie Micro Jiejie Micro
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Jiangsu JieJie Microelectronics Co., Ltd Jiejie Micro (JJW)
Jenis Transistor N-Channel Power Trench MOSFET —
Drain-Source Voltage V(DSS) 60 V —
Continuous Drain Current I(D) 55 A (at V(GS)=10 V, T(C)=25 °C) —
R(DS(on)) Typ @ V(GS)=10 V 7.7 mΩ —
R(DS(on)) Typ @ V(GS)=4.5 V 8.9 mΩ —
Gate Threshold Voltage V(GS(th)) Typ 1.5 V —
Kemasan PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) PDFN5x6-8L (Power DFN 5x6 mm, 8 leads)
Jenis Pemasangan Surface Mount Surface Mount (SMD)
Plating Pb-free —
Boson Bebas Yes —
RoHS Compliant —
UIS (Avalanche) Tested 100 % —
V(DS) Tested 100 % —
EAS Test Condition T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A —
Primary Applications Load Switch, PWM, DC-DC, Motor Drive —
Part Number — JMTG070N06A
Polarity / Type — N-channel Enhancement Mode
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 70 A
On-Resistance RDS(ON) — < 6 mOhm @ VGS = 10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Technology — Advanced Trench MOSFET
Single Pulse Avalanche Energy (EAS) — IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC)
Lead Status — Lead free / RoHS compliant
Gambaran Suhu Operasi — [DATA_NEEDED: TJ max and operating range]
Thermal Resistance RthJA — [DATA_NEEDED: theta_JA]
Configuration — Single N-channel MOSFET

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