K3LK4L40DM-BGCT vs K3LK8K80CM-MFCP Perbandingan
Perbandingan bersamaan detil K3LK4L40DM-BGCT dari Samsung Electronics dan K3LK8K80CM-MFCP dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K3LK4L40DM-BGCT | K3LK8K80CM-MFCP |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DRAM (SDRAM component) | LPDDR5 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 48 Gbit (6 GB) |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Laju Data | [DATA_NEEDED: Data Rate] | — |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | -40 C to +105 C (automotive-grade) |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | unknown |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Level MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Organisasi | — | [DATA_NEEDED: organization (x width)] |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| Antarmuka | — | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| Paket | — | 315-ball FBGA (MFCP) |
| Ball Count | — | 315 |
| Tegangan Pemuat | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |